企業(yè)博客
更多>>適合5G室外基站專用的TCXO溫補(bǔ)晶振X1G006011004314
來(lái)源:http://art-for-everybody.com 作者:kiue 2022年09月24
適合5G室外基站專用的TCXO溫補(bǔ)晶振X1G006011004314,5G基站作為5G網(wǎng)絡(luò)的核心,能夠有效的改變我們的生活和未來(lái)的經(jīng)濟(jì),隨著5G的到來(lái),使得我們的生活更加便捷,同時(shí)也帶來(lái)新的機(jī)會(huì),愛(ài)普生公司在這個(gè)5G基站中找到新的發(fā)展方向,作為一家具備多元化的制造商,自成立以來(lái)一直秉持著專業(yè),誠(chéng)信的經(jīng)營(yíng)理念,以幫助全球用戶解決在晶體行業(yè)所遇到的問(wèn)題,以此實(shí)現(xiàn)自我的價(jià)值,并打造專業(yè)化的技術(shù)團(tuán)隊(duì)以及一流的服務(wù)團(tuán)隊(duì),開(kāi)發(fā)出更多高質(zhì)量的石英晶振。


適合5G室外基站專用的TCXO溫補(bǔ)晶振X1G006011004314,愛(ài)普生公司推出了TG-5511CA晶振,溫補(bǔ)晶振編碼X1G006011004314,頻率20.000000兆赫,輸出WaveCMOS,電源電壓3.13 ~ 3.46 V,電源電壓(一般)3.300 V,尺寸(LxWxH)7.0 x 5.0 x 1.5 mm,工作溫度-40至+105°C,頻率公差+/- 1.0 ppm,5G基站和邊緣計(jì)算可調(diào)至+85℃,需要戶外安裝,小型化和無(wú)風(fēng)扇操作,與其他tcxo相比,它提供了各種改進(jìn),如由于低溫的坡度和相位噪聲,符合GR-1244-CORE Stratum3和G.8262.1, G.8273.2 (A類,B類),注意:本產(chǎn)品沒(méi)有電壓控制(Vc)功能.
晶振也分為無(wú)源晶振和有源晶振兩種類型。無(wú)源晶振與有源晶振(諧振)的英文名稱不同,無(wú)源晶振為crystal(晶體),而有源晶振則叫做oscillator(振蕩器)。無(wú)源晶振需要借助于時(shí)鐘電路才能產(chǎn)生振蕩信號(hào)自身無(wú)法振蕩起來(lái),所以“無(wú)源晶振”這個(gè)說(shuō)法并不準(zhǔn)確;有源晶振是一個(gè)完整的振蕩器。石英晶體振蕩器與石英晶體諧振器都是提供穩(wěn)定電路頻率的一種電子器件。


適合5G室外基站專用的TCXO溫補(bǔ)晶振X1G006011004314,愛(ài)普生公司推出了TG-5511CA晶振,溫補(bǔ)晶振編碼X1G006011004314,頻率20.000000兆赫,輸出WaveCMOS,電源電壓3.13 ~ 3.46 V,電源電壓(一般)3.300 V,尺寸(LxWxH)7.0 x 5.0 x 1.5 mm,工作溫度-40至+105°C,頻率公差+/- 1.0 ppm,5G基站和邊緣計(jì)算可調(diào)至+85℃,需要戶外安裝,小型化和無(wú)風(fēng)扇操作,與其他tcxo相比,它提供了各種改進(jìn),如由于低溫的坡度和相位噪聲,符合GR-1244-CORE Stratum3和G.8262.1, G.8273.2 (A類,B類),注意:本產(chǎn)品沒(méi)有電壓控制(Vc)功能.
![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
![]() |
![]() |
![]() |
![]() |
![]() |
![]() |
![]() |
X1G006011004214 | TG-5511CA | 19.200000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006011004314 | TG-5511CA | 20.000000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006011004414 | TG-5511CA | 24.576000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006011004514 | TG-5511CA | 25.000000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006011004614 | TG-5511CA | 38.880000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006011004714 | TG-5511CA | 40.000000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006011004814 | TG-5511CA | 50.000000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006011007614 | TG-5511CA | 30.720000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006011007714 | TG-5511CA | 24.576000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006011007814 | TG-5511CA | 49.152000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006011007914 | TG-5511CA | 24.000000 MHz | 7.00 x 5.00 x 1.50 mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006011008014 | TG-5511CA | 48.000000 MHz | 7.00 x 5.00 x 1.50 mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006011008114 | TG-5511CA | 19.200000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006011008214 | TG-5511CA | 38.400000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006011008314 | TG-5511CA | 27.000000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006011009014 | TG-5511CA | 25.000000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006011009114 | TG-5511CA | 19.440000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006011009214 | TG-5511CA | 25.600000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006011009314 | TG-5511CA | 40.000000 MHz | 7.00 x 5.00 x 1.50 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
正在載入評(píng)論數(shù)據(jù)...
此文關(guān)鍵字: TCXO溫補(bǔ)晶振
相關(guān)資訊
- [2025-03-14]12.87174 KX-327FT 1610 32.76...
- [2025-03-11]SiT8103AI-13-18E-33.333333T 2...
- [2025-03-10]Q 0.032768-JTX310-12.5-20-T3-...
- [2025-03-07]日本NDK小尺寸晶振NX1210AB-48M...
- [2025-03-06]無(wú)線藍(lán)牙Jauch晶振Q 24.0-JXS32...
- [2025-03-05]Jauch無(wú)源晶振Q 0.032768-JTX31...
- [2025-03-04]ECS-2333-200-BN-TR 3225 20M X...
- [2025-03-03]O 20,0-JTP75HC-F-K-3,3-LF 705...